1200 V Silicion Carbide Schottky diode in TO-220 real2pin package The CoolSiC™ Schottky diode generation 5 1200 V, 10 A in a TO-220 real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point..