CY7C1041GN30-10BVXIT is a 4-Mbit asynchronous SRAM organized as 256K × 16, for parallel memory expansion in embedded systems. It operates from 2.2 V to 3.6 V over -40°C to 85°C (industrial) with 10 ns address access time. Byte writes are supported via BLE/BHE. The 65 nm GN process enables low leakage (ISB2 8 mA max) and 45 mA max ICC, in a 48-ball VFBGA (6 × 8 × 1.0 mm) tape-and-reel package.