The S29GL512S11DHV020 is a 512 Mb (64 MB) parallel NOR flash memory based on Infineon's 65 nm MIRRORBIT™ Eclipse technology. It delivers 100 ns random and 15 ns page access times, operates from a 3.0 V core with 1.65 V to VCC versatile I/O, and supports a ×16 data bus. Features include a 512-byte programming buffer, advanced sector protection, internal ECC for single-bit error correction, and up to 100,000 program/erase cycles with 20 years data retention.