S80KS5123GABHV020 is a 512 Mb HYPERRAM™ self-refresh DRAM with an octal xSPI DDR interface for high-bandwidth memory expansion in embedded and automotive designs. It operates from 1.7 V to 2.0 V and supports up to 200 MHz clock for up to 400 MBps (3,200 Mbps) throughput with 35 ns maximum access time. Configurable linear or wrapped bursts and hybrid sleep plus deep power down (30 µA at 105°C) help manage power.