S80KS5123GABHI020 is a 512 Mb HYPERRAM™ self-refresh DRAM for fast scratchpad memory on 1.8 V systems. It uses an octal xSPI DDR interface with up to 200 MHz clock, 35 ns tACC, and up to 400 MB/s throughput, with RWDS for latency indication and data strobe/mask. Supports linear and wrapped bursts (16–128 B), hybrid sleep, and deep power down (30 µA). Industrial -40°C to 85°C, 24-ball FBGA.