The S29GL256S90DHI023 is a 256 Mb parallel flash memory built on 65 nm MIRRORBIT™ Eclipse technology. It features a 3.0 V core, versatile I/O (1.65 V to 3.6 V), 16-bit data bus, and random access time of 90 ns with page access as fast as 15 ns. A 512-byte programming buffer, automatic ECC, and uniform 128 kbyte sector erase enhance reliability. Advanced sector protection, 100,000 program/erase cycles, and 20-year data retention suit embedded and automotive uses.