The S29GL01GS12DHIV20 is a 1 Gb (128 MB), 3.0 V parallel NOR flash memory built on 65 nm MIRRORBIT™ Eclipse technology. It supports random access times of 120 ns and page mode access down to 25 ns, with a 512-byte programming buffer for fast writes. Operating from 2.7 V to 3.6 V VCC and 1.65 V to VCC VIO, it withstands -40°C to +105°C. Advanced sector protection, internal ECC, and 100,000 program/erase cycles ensure reliability for embedded and automotive applications.