CY7C1049G30-10VXI is a 4-Mbit (512K × 8) asynchronous CMOS SRAM with embedded ECC for single-bit error correction. It operates from 2.2 V to 3.6 V over −40°C to +85°C and supports 10 ns access time. The device supports CMOS/TTL input thresholds, automatic CE power-down (ISB2 6 mA typ), and low operating current (ICC 38 mA typ, 45 mA max at 100 MHz), in a Pb-free 36-pin molded SOJ.