CY7S1049GE30-10VXIT is a 4-Mbit (512K × 8) asynchronous SRAM with embedded ECC and an ERR pin for single-bit error detect/correct indication. It supports 10 ns access (tAA) at 2.2 V to 3.6 V, operates from -40°C to +85°C, and offers CMOS standby ISB2 up to 8 mA. Deep-Sleep disables normal operation for data retention with IDS up to 15 µA. The -VXIT option is a 36-pin SOJ, tape-and-reel.