OptiMOS™ low-voltage power MOSFET 40V in PQFN 3.3x3.3 Source-Down center-gate package with industry leading RDS(on) IQE013N04LM6CG, innovative OptiMOS™ power MOSFET Source-Down 40 V, 1.35mOhm, in a 3.3x3.3 PQFN Source-Down Center-Gate package. This best-in-class power MOSFET challenges the status quo in power density and form factor in the end application, minimize the internal restrictions of PCB area requirements, enabling an ergonomic design and optimizing the end user experience.