The 5th Generation CoolSiC™ Automotive Schottky Diode and represents Infineon leading edge technology for Silicon Carbide Schottky Barrier diodes Thanks to a compact design and a technology based on thin wafers, this family of products shows improved efficiency over all load conditions resulting from both its thermalcharacteristics and low figure of merit (Qc x Vf). This product family has been designed to complement Infineon’s IGBT and CoolMOS™ portfolio. This ensures meeting the most stringent application requirements inthe 650V voltage class.