650 V Silicon Carbide Schottky diode 16 A in TO-247 package CoolSiC™ generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Q c x V f). The CoolSiC™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.