OptiMOS™ 6 low-voltage power MOSFET 40 V in PQFN 3.3x3.3 Source-Down center-gate package with best-price performance IQE012N03LM5CG, OptiMOS™ 6 40 V power MOSFET, 1.20 mOhm, in a innovative PQFN 3.3x3.3 Source-Down Center-Gate offers a flipped chip design connecting the source potential directly to the PCB over the thermal pad, giving several advantages, such as increased thermal capability, advanced power density and improved layout possibilities in a Center-Gate footprint for easy design-in on space-constrained PCB areas.