OptiMOS™ 6 low-voltage power MOSFET 40 V in PQFN 3.3x3.3 Source-Down dual-side cooled package with best-price performance IQE020N04LM6CG, OptiMOS™ 6 40 V power MOSFET, 2.0 mOhm, in a innovative PQFN 3.3x3.3 Source-Down Dual-Side cooled package with Center-Gate footprint enables easy design-in on space-constrained PCB areas. A best-price approach disrupts the status quo by delivering exceptional power density and a minimized form factor in end applications, enabling a compact design and optimizing the end user experience while offering best price-performance.