OptiMOS™ 7 40 V switching optimized power MOSFET in PQFN 3.3x3.3 Source-Down Center Gate package Infineon latest OptiMOS™ 7 40 V switching-optimized MOSFET offers an unprecedented level of application-optimization, enabling peak performance across a range of applications, including data centers, artificial intelligence, telecommunications, and more. It delivers up to 25% improved conduction loss and up to 20% better FOM Qg and FOM Qoss vs. OptiMOS™ 6, enabling higher efficiency and power density in soft-switching DC-DC, IBC and 48 V conversion.