CoolGaN™ Transistor 100 V G3 in RQFN 5x6, 1.2 mΩ The IGD015S10S1 is a 100 V normally-off e-mode power transistor housed in a Si-footprint-compatible RQFN 5x6 package, enabling high-power-density designs. Thanks to its very low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.