CoolSiC™ MOSFET discrete 1200 V in top-side cooled Q-DPAK dual half-bridge package CoolSiC™ MOSFET discrete 1200 V, 78.1 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package, optimized for industrial applications such as EV charging, string inverters, and power supplies. The Q-DPAK enables lower system cost through simplified assembly and excellent thermal performance. Top-side cooled dual half-bridge design delivers improved cooling, higher energy efficiency, greater design flexibility, and enhanced overall performance.