CoolSiC™ 1200 V SiC MOSFET G2 and Schottky diode G5 in top side cooled Q-DPAK dual die-pad package CoolSiC™ 1200 V boost stage combining a 25.4 mOhm CoolSiC™ MOSFET and 40 A Schottky diode in a top-side cooled Q-DPAK package with dual die-pad configuration. Designed for industrial power conversion, it offers simplified assembly, excellent thermal performance, and high power density. The optimized layout enables improved efficiency, superior thermal management, and reduced system cost.