OptiMOS™ 7 40 V switching optimized power MOSFET in PQFN 5x6 Dual-Side Cooled (DSC) package Infineon’s latest OptiMOS™ 7 ISCH65N04LM7SC 40 V MOSFET combines low 0.65 mΩ RDS(on) with outstanding switching performance to maximize efficiency in high power systems. Featuring only 39 nC Qg at 4.5 V and 94 nC QOSS, it enables lower switching losses, higher switching frequencies and increased power density. Optimized for GaN-compatible gate drive voltages, it is ideal for high current DC-DC, IBC and 48 V conversion.