OptiMOS™ 7 40 V switching optimized power MOSFET in PQFN 5x6 Dual-Side Cooled (DSC) package Infineon’s latest OptiMOS™ 7 40 V switching-optimized MOSFET delivers a new level of efficiency for power conversion. Compared to the previous-generation OptiMOS™ 6 BSC007N04LS6SC, it achieves up to 56% lower Qgd, 36% better RDS(on) 4,5 × Qg FOM and 24% lower QOSS, enabling lower switching losses, higher switching frequencies and increased power density in high power DC-DC converters, HVIBC and 48 V conversion.