This 100 V, 5.3 mΩ, SON 5 mm × 6 mm NexFET power MOSFET is designed to minimize losses in power conversion applications. Typical RθJA = 40°C/W on a 1−inch2, 2-oz. Cu pad on a 0.06−inch thick FR4 PCB. Max RθJC = 1.0°C/W, pulse duration ≤100 μs, duty cycle ≤1% For all available packages, see the orderable addendum at the end of the data sheet.