The HMC413QS16G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 1.6 and 2.2 GHz. The amplifier is packaged in a low cost, surface mount 16 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 23 dB of gain, +29.5 dBm of saturated power at 42% PAE from a +5V supply voltage. The amplifi er can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/current control. Applications * Cellular / PCS / 3G * Portable & Infrastructure * Wireless Local Loop * Gain: 23 dB * Saturated Power: +29.5 dBm 42% PAE * Supply Voltage: +2.75V to +5V * Power Down Capability * Low External Part Count