The HMC457QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifier operating between 1.7 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB from 2.0 to 2.2 GHz. Utilizing a minimum number of external components, the amplifier output IP3 can be optimized to +45 dBm. The power control (Vpd) can be used for full power down or RF output power/ current control. The high output IP3 and PAE make the HMC457QS16G(E) ideal power amplifier for Cellular/3G base station & repeater applications. Applications * CDMA & W-CDMA * GSM, GPRS & Edge * Base Stations & Repeaters * Output IP3: +46 dBm * Gain: 27 dB @ 1900 MHz 48% PAE @ +32 dBm Pout * +25 dBm W-CDMA Channel Power @ -50 dBc ACPR * Integrated Power Control (Vpd) * QSOP16G SMT Package: 29.4 mm² * Included in the HMC-DK002 Designer’s Kit