VCO with Fo/2 & Divide-by-4 SMT, 11.1-12.4 GHz

The HMC582LP5(E) is a GaAs InGaP Herterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC582LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO's phase noise performance is excellent over temperature, shock and process due to the oscillator's monolithic structure.

Power output is +9 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5×5 mm surface mount package, and requires no external matching components.

APPLICATIONS

* Point-to-Point Radios

* Point-to-Multi-Point Radios

* Test Equipment & Industrial Controls

* SATCOM

* Military End-Use

* Triple Output:

Fo= 11.1 - 12.4 GHz

Fo/2= 5.55 - 6.2 GHz

Fo/4= 2.78 - 3.1 GHz

* Pout: +9 dBm