[elecena] 20-V, N channel NexFET™ power MOSFET, dual common drain LGA 1.35 mm x 1.35 mm, 24 mOhm, gate ESD protection | YME | 4

[elecena] 20-V, N channel NexFET™ power MOSFET, dual common drain LGA 1.35 mm x 1.35 mm, 24 mOhm, gate ESD protection | YME | 4 | -55 to 1 - zmiany ceny This 20 V, 18.7 m&ohm;, 1.35 mm × 1.35 mm LGA Dual NexFET power MOSFET is designed to minimize resistance in the smallest footprint. Its small footprint and common drain configuration make the device ideal for battery-powered applications in small handheld devices. 20-V, N channel NexFET™ power MOSFET, dual common drain LGA 1.35 mm x 1.35 mm, 24 mOhm, gate ESD protection | YME | 4 | -55 to 1 - 0.00 USD https://elecena.pl/product/5358836/20-v-n-channel-nexfet-power-mosfet-dual-common-drain-lga-1-35-mm-x-1-35-mm-24-mohm-gate-esd-protection-yme-4-55-to-1 2015-12-06 20-V, N channel NexFET™ power MOSFET, dual common drain LGA 1.35 mm x 1.35 mm, 24 mOhm, gate ESD protection | YME | 4 | -55 to 1 - 0.12 USD https://elecena.pl/product/5358836/20-v-n-channel-nexfet-power-mosfet-dual-common-drain-lga-1-35-mm-x-1-35-mm-24-mohm-gate-esd-protection-yme-4-55-to-1 2026-07-31