The HMC659 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 15 GHz. The amplifier provides 19.1 dB of gain, +35 dBm output IP3 and +26.5 dBm of output power at 1 dB gain compression while requiring 300 mA from a +8V supply. Gain flatness is excellent at ±0.4 dB from DC to 10 GHz making the HMC619 ideal for EW, ECM, Radar and test equipment applications. The HMC619 amplifier I/Os are internally matched to 50 ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). Applications * Telecom Infrastructure * Microwave Radio & VSAT * Military & Space * Test Instrumentation * Fiber Optics * P1dB Output Power: +26.5 dBm * Gain: 19.1 dB * Output IP3: +35 dBm * Supply Voltage: +8V @ 300 mA * 50 Ohm Matched Input/Output * Die Size: 3.115 x 1.630 x 0.1 mm