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  <title>[elecena] Low Capacitance, Low Charge Injection, ±15 V/+12 V CMOS SPST in SOT-23 - zmiany ceny</title>
  <description>The ADG1201 is a monolithic complementary metal-oxide
semiconductor (CMOS) device containing a single-pole,
single-throw (SPST) switch designed in an iCMOS® process.
iCMOS is a modular manufacturing process combining a
high voltage CMOS and bipolar technologies. iCMOS
enables the development of a wide range of high performance
analog ICs capable of 33 V operation in a footprint that no
previous generation of high voltage devices has been able
to achieve. Unlike analog ICs using conventional CMOS
processes, iCMOS components can tolerate high supply
voltages while providing increased performance,
dramatically lower power consumption, and reduced
package size.

The ultralow capacitance and charge injection of this
switch makes it an ideal solution for data acquisition and
sample-and-hold applications, where low glitch and fast
settling are required. Fast switching speed coupled with
high signal bandwidth also makes the device suitable for
video signal switching.

iCMOS construction ensures ultra low power dissipation,
making the device ideally suited for portable and batterypowered instruments.

The ADG1201 contains a SPST switch. Figure 1 shows that with a logic input of 1, the switch of the ADG1201 is closed. The switch conducts equally well in both directions when on and has an input signal range that extends to the supplies. In the off condition, signal levels up to the supplies are blocked.

Product Highlights

* Ultralow capacitance.

* &amp;lt;1 pC charge injection.

* Ultralow leakage.

* 3 V logic-compatible digital inputs: VINH = 2.0 V minimum, VINL = 0.8 V maximum.

* No logic voltage (VL) power supply required.

* SOT-23 package.

Applications

* Automatic test equipment

* Data acquisition systems

* Battery-powered systems

* Sample-and-hold systems

* Audio signal routing

* Video signal routing

* Communication systems

Data Sheet, Rev. 0, 2/08

* 2.4 pF typical off switch source capacitance, dual supply

* &amp;lt;1 pC charge injection

* Low leakage: 0.6 nA maximum at 85°C

* 120 Ω typical on resistance at 25°C, dual supply

* Fully specified at ±15 V, +12 V</description>
  <item>
   <title>Low Capacitance, Low Charge Injection, ±15 V/+12 V CMOS SPST in SOT-23 - 0.00 USD</title>
   <link>https://elecena.pl/product/7593661/low-capacitance-low-charge-injection-15-v-12-v-cmos-spst-in-sot-23</link>
   <pubDate>2017-02-16</pubDate>
  </item>
  <item>
   <title>Low Capacitance, Low Charge Injection, ±15 V/+12 V CMOS SPST in SOT-23 - 1.50 USD</title>
   <link>https://elecena.pl/product/7593661/low-capacitance-low-charge-injection-15-v-12-v-cmos-spst-in-sot-23</link>
   <pubDate>2018-03-28</pubDate>
  </item>
  <item>
   <title>Low Capacitance, Low Charge Injection, ±15 V/+12 V CMOS SPST in SOT-23 - 0.00 USD</title>
   <link>https://elecena.pl/product/7593661/low-capacitance-low-charge-injection-15-v-12-v-cmos-spst-in-sot-23</link>
   <pubDate>2025-01-22</pubDate>
  </item>
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