The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching. Features - DC current gain classification - high voltage capability - low spread of dynamic parameters - very high switching speed Applications - electronic ballast for fluorescent lighting - switch mode power supplies https://elecena.pl/product/9689203/mje13007-hf-bipolar-transistor-npn-400v-8a-80w-to-220 2017-08-05 https://elecena.pl/product/9689203/mje13007-hf-bipolar-transistor-npn-400v-8a-80w-to-220 2018-05-04 https://elecena.pl/product/9689203/mje13007-hf-bipolar-transistor-npn-400v-8a-80w-to-220 2018-12-16 https://elecena.pl/product/9689203/mje13007-hf-bipolar-transistor-npn-400v-8a-80w-to-220 2019-04-01 https://elecena.pl/product/9689203/mje13007-hf-bipolar-transistor-npn-400v-8a-80w-to-220 2021-06-02 https://elecena.pl/product/9689203/mje13007-hf-bipolar-transistor-npn-400v-8a-80w-to-220 2022-11-07 https://elecena.pl/product/9689203/mje13007-hf-bipolar-transistor-npn-400v-8a-80w-to-220 2026-09-19