The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a hollow emitter structure to enhance switching speeds. Features - low spread of dynamic parameters - high voltage capability - minimum lot-to-lot spread for reliable operation - very high switching speed Applications - switch mode power supplies https://elecena.pl/product/9689205/mje13009-hf-bipolar-transistor-npn-400v-12a-100w-to-220ab 2017-08-05 https://elecena.pl/product/9689205/mje13009-hf-bipolar-transistor-npn-400v-12a-100w-to-220ab 2018-05-04 https://elecena.pl/product/9689205/mje13009-hf-bipolar-transistor-npn-400v-12a-100w-to-220ab 2018-12-16 https://elecena.pl/product/9689205/mje13009-hf-bipolar-transistor-npn-400v-12a-100w-to-220ab 2021-06-02 https://elecena.pl/product/9689205/mje13009-hf-bipolar-transistor-npn-400v-12a-100w-to-220ab 2021-07-05 https://elecena.pl/product/9689205/mje13009-hf-bipolar-transistor-npn-400v-12a-100w-to-220ab 2022-11-12