LND150N8-G MOSFET, N-Ch SOT-89-3, 500V 1A 0.74W

The LND150 is a high-voltage N-channel depletion mode (normally-on) transistor utilising lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high-voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.

- Free from secondary breakdown - Low power drive requirement - Ease of paralleling - Excellent thermal stability - Integral source-drain diode - High input impedance and low CISS - ESD gate protection

Technical data: - BVdsx: 500 V - RDS: 1000 ohm - Ugs (off): -1.0 - -3.0 V - RDS: 1 kOhm - Ic: 1 mA