IMSQ120R053M2HH CoolSiC™ MOSFET discrete 1200 V in top-side cooled Q-DPAK dual half-bridge...
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CoolSiC™ MOSFET discrete 1200 V in top-side cooled Q-DPAK dual half-bridge package CoolSiC™ MOSFET discrete 1200 V, 53 mΩ G2 in a top-side cooled Q-DPAK dual half-bridge package specifically designed for wide use in industrial application, including, industrial drives, EV charging solutions, solar systems and uninterruptible power supply. The Q-DPAK provides customers with a reduced system cost by enabling easier assembly with outstanding thermal performance. Compared to bottom-side cooled solutions, top-s
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- Infineon