MBRS130LT3G Schottky barrier rectifier, 30V, 1.0 A, DO-214AA/SMB

Schottky Barrier Rectifier, 30V, 1.0 A, DO-214AA/SMB

Description: This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system.

Features: - Very Low Forward Voltage Drop (0.395 Volts Max @ 1.0 A, TJ = 25°C) - Small Compact Surface Mountable Package with J-Bend Leads - Highly Stable Oxide Passivated Junction - Guard-Ring for Stress Protection - ESD Ratings: - Human Body Model = 3B (> 16000 V) - Machine Model = C (> 400 V) - AEC-Q101 Qualified and PPAP Capable - SBRS8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements - All Packages are Pb-Free*

Mechanical Characteristics - Case: Epoxy, Molded - Weight: 100 mg (approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds - Cathode Polarity Band