10 W, GaN Power Amplifier, 2.7 GHz to 3.8 GHz

The HMC1114LP5DE is a gallium nitride (GaN), broadband power amplifier, delivering 10 W with more than 50% power added efficiency (PAE) across a bandwidth of 2.7 GHz to 3.8 GHz. The HMC1114LP5DE provides ±0.5 dB gain flatness.

The HMC1114LP5DE is ideal for pulsed or continuous wave (CW) applications such as wireless infrastructure, radar, public mobile radio, and general-purpose amplification.

The HMC1114LP5DE is housed in a compact LFCSPCAV package.

Applications

* Extended battery operation for public mobile radios

* Power amplifier stage for wireless infrastructure

* Test and measurement equipment

* Commercial and military radars

* General-purpose transmitter amplification

* High saturated output power (PSAT): 41.5 dBm typical

* High small signal gain: 35 dB typical

* High power gain for saturated output power: 25.5 dB typical

* Bandwidth: 2.7 GHz to 3.8 GHz

* High power added efficiency (PAE): 54% typical

* High output IP3: 44 dBm typical

* Supply voltage: VDD = 28 V at 150 mA

* 32-lead, 5 mm × 5 mm LFCSPCAV package