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STPSC40065CWY Automotive 650 V, 40 A dual SiC Power Schottky Diode

STMicroelectronics

STPSC40065CWY Automotive 650 V, 40 A dual SiC Power Schottky Diode RSS 12.54 12.54 USD50.95 PLN
  • Sklep zagraniczny
MPN:
STPSC40065CWY
Producent:
STMicroelectronics
Obudowa:
TO-247
Waluta:
dolar amerykański
Dodany do bazy:
Ostatnio widziany:
Zmiana ceny:
+4.33% (02.08.2026)
Poprzednia cena:
12.02 USD
Ilość [ x szt]: 10+ 100+
Cena USD [za szt]: 8.76 7.47

The SiC diode is a high voltage power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Used as a freewheeling or output rectification diode, this rectifier will enhance the performance and form factor of the targeted power supply or inverter.

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