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SCT20N120 Silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an HiP247 package

STMicroelectronics

SCT20N120 Silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an HiP247 package RSS 11.74 11.74 USD47.70 PLN
  • Sklep zagraniczny
MPN:
SCT20N120
Producent:
STMicroelectronics
Waluta:
dolar amerykański
Dodany do bazy:
Ostatnio widziany:
Zmiana ceny:
-1.1% (19.03.2026)
Poprzednia cena:
11.87 USD
Ilość [ x szt]: 10+
Cena USD [za szt]: 8.32

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

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