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L6494LD High voltage high and low-side 2 A gate driver

STMicroelectronics

L6494LD High voltage high and low-side 2 A gate driver RSS Sample
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MPN:
L6494LD
Producent:
STMicroelectronics
Obudowa:
SO14
Dodany do bazy:
Ostatnio widziany:
Zmiana ceny:
+0.47% (28.09.2026)
Poprzednia cena:
2.11
Ilość [ x szt]: 10+ 25+ 100+ 250+ 500+
Cena USD [za szt]: 1.56 1.35 1.27 1.20 1.16

The L6494 is a high voltage device manufactured with the BCD6 “OFF-LINE” technology. It is a single-chip half-bridge gate driver for N-channel power MOSFETs or IGBTs.

The high-side (floating) section is designed to stand a voltage rail up to 500 V, with 600 Vtransient withstand voltage. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing microcontroller or DSP.

The device is a single input gate driver with programmable deadtime, and also features an active-low shutdown pin.

Both device outputs can sink 2.5 A and source 2 A, making the L6494 particularly suited for medium and high capacity power MOSFETs\IGBTs.

The independent UVLO protection circuits present on both the lower and upper driving sections prevent the power switches from being operated in low efficiency or dangerous conditions.

The integrated bootstrap diode as well as all of the integrated features of this driver make the application PCB design simpler and more compact, and help reducing the overall bill of material.

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