STPSC20H12G2Y-TR Automotive 1200 V, 20 A Silicon Carbide Diode
STMicroelectronics
RSS
10.63 USD43.19 PLN
- Sklep zagraniczny
- MPN:
- STPSC20H12G2Y-TR
- Producent:
- STMicroelectronics
- Waluta:
- dolar amerykański
- Dodany do bazy:
- Ostatnio widziany:
- Zmiana ceny:
- +3.61% (13.07.2026)
- Poprzednia cena:
- 10.26 USD
| Ilość [ x szt]: | 10+ | 100+ |
|---|---|---|
| Cena USD [za szt]: | 5.93 | 5.56 |
Sugerowane produkty dla stpsc20h12
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, the STPSC20H12-Y will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.
Produkt pochodzi z oferty sklepu STMicroelectronics