Transphorm Gen IV SuperGaN FET - 650V, 35mOhm

Transphorm Gen IV SuperGaN™ FETs are normally-off devices that enable the AC-DC bridgeless totem-pole PFC designs. These FETs feature high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN™ platform comes with advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge.