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EV Inverter Control; IGBT & SiC GDIC

NXP

EV Inverter Control; IGBT & SiC GDIC RSS Sample
  • Darmowa próbka
MPN:
MGD3160AM535EK
Kod:
GD3160
Producent:
NXP
Obudowa:
SOT1762
Dodany do bazy:
Ostatnio widziany:

GD3160 silicon and enablement (documentation, software and boards) are available for selected customers (NDA required). For additional information and sample availability

contact support or your local sales representative.

The GD3160 is an improved, advanced single-channel high-voltage isolated gate driver with enhanced features for driving and protecting silicon carbide (SiC) MOSFETs and functional safety. The GD3160's SPI programmable drive, protection and fault reporting features allow users to optimize conditions for driving and protecting almost any SiC MOSFET or Si IGBT power switch. ISO 26262 compliant and automotive qualified, the GD3160 integrates BOM saving and functional safety features to support implementing ASIL D compliant and power density efficient xEV inverter solutions.

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