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5.7kVrms ±10A, single-channel isolated gate driver w/ DESAT & internal miller clamp for IGBT/SiCFETs

Texas Instruments

5.7kVrms ±10A, single-channel isolated gate driver w/ DESAT & internal miller clamp for IGBT/SiCFETs RSS Sample
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MPN:
UCC21750
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The UCC21750 is a galvanic isolated single channel gate driver designed for

SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection

features, best-in-class dynamic performance and robustness. The UCC21750 has up to ±10-A peak source and sink current.

The input

side is isolated from the output side with SiO2 capacitive isolation

technology, supporting up to 1.5-kVRMS working voltage,

12.8-kVPK surge immunity with longer than 40 years Isolation barrier

life, as well as providing low part-to-part skew , and > 150-V/ns common mode noise immunity

(CMTI).

The UCC21750 includes the state-of-art protection features, such as fast

overcurrent and short circuit detection, shunt current sensing support, fault

reporting, active miller clamp, and input and output side power supply UVLO to

optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM

sensor can be used for easier temperature or voltage sensing, further increasing the

drivers’ versatility and simplifying the system design effort, size, and cost.

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