576M-BIT Low Latency DRAM Common I/O

The µPD48576209F1 is a 67, 108, 864-word by 9 bit, the µPD48576218F1 is a 33, 554, 432 word by 18 bit and the µPD48576236F1 is a 16, 777, 216 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. The µPD48576209F1, µPD48576218F1 and µPD48576236F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK#. These products are suitable for application which require synchronous operation, High-Speed, low voltage, high density and wide bit configuration.