Matched Monolithic Dual Transistor

The MAT01 is a monolithic dual NPN transistor. An exclusive Silicon Nitride "Triple-Passivation" process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40µV, temperature drift of 0.15µV/°C, and hFE matching of 0.7%.

Very high h is provided over a six decade range of collector current, including an exceptional hFE of 590 at a collector current of only 10nA. The high gain at lower collector current makes the MAT01 ideal for use in low-power, low-level input stages.

APPLICATIONS

* Weigh scales

* Low noise, op amp, front end

* Current mirror and current sink/source

* Low noise instrumentation amplifiers

* Voltage controlled attenuators

* Log amplifiers

* Low VOS (VBE match): 40 μV typical, 100 μV maximum

* Low TCVOS: 0.5 μV/°C maximum

* High hFE: 500 minimum