STPSC1206D SiC Schottky diode, 600V, 12A, TO220AC

These diodes are made of silicon carbide substrate. The wideband gap material supports the fabrication of a high voltage Schottky diode structure. Such diodes have little or no recovery characteristics. The recovery properties are independent of temperature. The use of these diodes significantly reduces the switching power losses of the associated MOSFET and thus increases the efficiency of the overall application. These diodes then outperform the power factor correction circuit, which operates under hard switching conditions.

Features

- No reverse recovery - Switching behaviour independent of temperature - suitable for PFC correction