EVSTDRIVEG600DG Demonstration board for STDRIVEG600 600V high-speed half-bridge gate driver with 150 mΩ, 650V e-mode GaN HEMT

The STDRIVEG600 is a high-speed half-bridge gate driver optimized to drive high-voltage enhanced mode GaN HEMTs.

It features separated high current sink/source gate driving pins, an integrated bootstrap diode, overtemperature, and allows supplying external switches up to 20 V, with undervoltage protection tailored for GaN HEMTs.

The EVSTDRIVEG600DG board is easy to use and quick and adapt for evaluating the characteristics of STDRIVEG600 driving 650 V e-Mode GaN switches.

It provides an on-board programmable dead time generator and a 3.3 V linear voltage regulator to supply external logic controllers like microcontrollers.

Spare footprints are also included to allow customizing the board for the final application, such as separate input signal or single PWM signal, use of optional external bootstrap diode, separate supply for VCC, PVCC or BOOT and the use of low-side shunt resistor for peak current mode topologies.

The EVSTDRIVEG600DG is 50 x 70 mm wide, FR-4 PCB resulting in 25 °C/W Rth(J‑A) in still air.