Gate Driver for HEV/EV

The RAJ2930004AGM is a gate driver IC for IGBT and SiC MOSFET gate-drive in high voltage inverter applications. Integrated 3750Vrms micro-isolators provide data transfer with high voltage isolation between the primary circuit (MCU side) and the secondary circuit (IGBT side). In addition, it boasts superior CMTI (Common Mode Transient Immunity) performance at 150 V/ns or higher, providing reliable communication and increased noise immunity while meeting the high voltages and fast switching speeds required in inverter systems.

This device contains a gate drive circuit, Miller clamp circuit, and soft turn-off circuit as well as several types of protection circuits such as overcurrent detection.