GaAs, pHEMT, MMIC, Low Noise Amplifier, 0.01 GHz to 20 GHz

The ADL8100 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), wideband low noise amplifier (LNA) that operates from 0.01 GHz to 20 GHz. The ADL8100 provides a typical gain of 20 dB at 0.01 GHz to 6 GHz, a 2.5 dB typical noise figure at 6 GHz to 14 GHz, and a typical output third-order intercept (OIP3) of 38 dBm at 0.01 GHz to 6 GHz, requiring only 220 mA from a 5 V supply voltage. The power dissipation can be lowered at the expense of OIP3 and output power. The ADL8100 also features inputs and outputs that are DC-coupled and internally matched to 50 Ω.

The ADL8100 is housed in a RoHS-compliant, 2 mm × 2 mm, 8-lead LFCSP.

APPLICATIONS

* Satellite communication

* Telecommunications

* Civilian radars

* Military radars

* Weather radars

* Electronic warfare

* Low noise figure: 2.5 dB typical at 6 GHz to 14 GHz* Single positive supply (self biased)* High gain: 20 dB typical from 0.01 GHz to 6 GHz