MSC080SMA120J

Our mSiC MOSFETs enable high-efficiency and robust performance in demanding, high-voltage applications. Leveraging over 20 years of silicon carbide (SiC) experience, these SiC MOSFETs are designed to maximize system efficiency while significantly reducing system weight and size.

The MSC080SMA120J is part of our MA Family of mSiC MOSFETs. This 1200V SiC MOSFET uses a gate drive voltage of 18-20V to ensure reliable switching performance with a low RDS(on) of 80 mOhms, minimizing conduction losses and enhancing overall system efficiency. This device is suitable for high-power applications, capable of handling continuous drain currents of 31A. With maximum ratings reaching up to 175°C, SiC MOSFETs can operate at elevated junction temperatures to provide superior thermal performance and reliability in harsh environments.

The SOT-227 package offers robust mechanical stability and excellent heat dissipation capabilities, making it ideal for high-power applications. The SOT-227 package's design allows for easy mounting and integration into power modules, enhancing reliability and simplifying assembly.