650V 240mΩ SuperGaN FET in PQFN88
Intersil
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- Darmowa próbka
- MPN:
- TP65H300G4LSGB
- Producent:
- Renesas Electronics
- Dodany do bazy:
- Ostatnio widziany:
Sugerowane produkty dla tp65h300g4lsgb
The TP65H300G4LSGB 650V 240mΩ Gallium Nitride (GaN) FET is a normally-off device built using Renesas' Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Renesas GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
The TP65H300G4LSGB is offered in an industry-standard PQFN88 with a Kelvin source and common source package configuration.
Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.
Produkt pochodzi z oferty sklepu Intersil