650V 72mΩ SuperGaN FET in TOLT
Intersil
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- Darmowa próbka
- MPN:
- TP65H070G4RS
- Producent:
- Renesas Electronics
- Dodany do bazy:
- Ostatnio widziany:
Sugerowane produkty dla tp65h070g4rs
The TP65H070G4RS 650V 72mΩ Gallium Nitride (GaN) FET is a normally-off device built using our Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Renesas' GaN power products offer improved efficiency over silicon through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
The TP65H070G4RS is offered in an industry-standard TOLT with a Kelvin source and common source package configuration.
Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.
Produkt pochodzi z oferty sklepu Intersil