650V 72mΩ SuperGaN FET in PQFN88
Intersil
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- Darmowa próbka
- MPN:
- TP65H070G4LSG
- Producent:
- Renesas Electronics
- Dodany do bazy:
- Ostatnio widziany:
Sugerowane produkty dla tp65h070g4lsg
The TP65H070G4LSG 650V 72mΩ Gallium Nitride (GaN) FET is a normally-off device built using our Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Renesas' GaN power products offer improved efficiency over silicon through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
The TP65H070G4LSG is offered in a performance PQFN88 with a common source package configuration.
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Produkt pochodzi z oferty sklepu Intersil